ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE-GROWN CAF2 ON SI(111)

被引：20
|
作者：
CHO, CC
KIM, TS
GNADE, BE
LIU, HY
NISHIOKA, Y
机构：
[1] Texas Instruments Incorporated, Central Research Laboratories, MS 147, Dallas, TX 75265
[2] Department of Electrical Engineering, Southern Methodist University, Dallas
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 03期
关键词：
D O I：
10.1063/1.106650
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
While epitaxial CaF2 films grown on Si(111) at temperatures above 550-degrees-C exhibited flat capacitance-voltage (C-V) curves, suggesting a pinned CaF2/Si(111) interface, we have observed unpinned C-V curves from as-deposited epitaxial CaF2 grown at 300-degrees-C. Our results demonstrate that C-V characteristics of CaF2/Si(111) are determined by the thermal history, rather than the crystalline quanlity, of the CaF2 film. Correlations among CaF2/Si interface state density, thermal stress, and atomic bonding at the interface are discussed.
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页码：338 / 340
页数：3
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