SIMPLE TECHNIQUE FOR SEPARATING THE EFFECTS OF INTERFACE TRAPS AND TRAPPED-OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：642

作者：

MCWHORTER, PJ

WINOKUR, PS

机构：

[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.96974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：133 / 135

页数：3

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