MULTIPLE-CHANNEL GAAS ALGAAS HIGH ELECTRON-MOBILITY TRANSISTORS

被引：52

作者：

SHENG, NH

LEE, CP

CHEN, RT

MILLER, DL

LEE, SJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 06期

关键词：

D O I：

10.1109/EDL.1985.26134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：307 / 310

页数：4

共 8 条

[1] CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION [J].

DRUMMOND, TJ ;

FISCHER, R ;

SU, SL ;

LYONS, WG ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :262-264

[2] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J].

INOUE, K ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L61-L63

[3]

JUDAPRAWIRA S, 1981, ELECTRON DEVIC LETT, V2, P14

[4]

KIKOSAKA K, 1983, SEP P NAT CONV I EL

[5]

KIRAKAWA K, 1984, APPL PHYS LETT, V45, P3

[6]

Mimura T., 1983, International Electron Devices Meeting 1983. Technical Digest, P99

[7]

Sheng N. H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P352

[8] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J].

SOLOMON, PM ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1015-1027

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