LOW-DARK-CURRENT LOW-VOLTAGE 1.3-1.6 MU-M AVALANCHE PHOTODIODE WITH HIGH-LOW ELECTRIC-FIELD PROFILE AND SEPARATE ABSORPTION AND MULTIPLICATION REGIONS BY MOLECULAR-BEAM EPITAXY

被引：22
作者：
CAPASSO, F
CHO, AY
FOY, PW
机构：
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 15期
关键词：
D O I：
10.1049/el:19840437
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：635 / 637
页数：3
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[2]   NEW LONG WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTO-DIODE GROWN BY MOLECULAR-BEAM EPITAXY [J].
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BETHEA, CG .
APPLIED PHYSICS LETTERS, 1983, 43 (11) :1040-1042
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CAPASSO F, 1983, DEC INT EL DEV M WAS, P468
[4]   LONG-WAVELENGTH (1.3- TO 1.6-MUM) DETECTORS FOR FIBER-OPTICAL COMMUNICATIONS [J].
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1355-1371
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