ELECTRONIC-PROPERTIES OF THIN SIO2-FILMS DEPOSITED AT LOW-TEMPERATURES BY NEW ECR MICROWAVE PECVD PROCESS

被引：5
作者：
CHAU, TT
MEJIA, SR
KAO, KC
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 16期
关键词：
D O I：
10.1049/el:19890728
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1088 / 1090
页数：3
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