RADIATION-DAMAGE DISTRIBUTIONS FOR 300 KEV ANTIMONY IONS IMPLANTED INTO SILICON

被引：0
作者：
TATARKIEWICZ, J
KRYNICKI, J
GROTZSCHEL, R
PAPROCKI, K
机构：
[1] INST CHEM & NUCL TECHNOL,PL-03195 WARSAW,POLAND
[2] ZENT INST KERNFORSCH ROSSENDORF,DDR-8051 DRESDEN,GER DEM REP
[3] MARIE CURIE SKLODOWSKA UNIV,INST PHYS,PL-20031 LUBLIN,POLAND
来源：
PHYSICS LETTERS A | 1985年 / 107卷 / 01期
关键词：
D O I：
10.1016/0375-9601(85)90245-2
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：48 / 50
页数：3
相关论文
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