EFFECT OF HIGHER ABSORPTION IN NON-LASING GAAS DIODES AT 300 DEGREES K

被引：16

作者：

GONDA, T

LAMORTE, MF

NYUL, P

JUNKER, H

机构：

来源：

关键词：

D O I：

10.1109/JQE.1966.1073991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：74 / +

页数：1

共 7 条

[1]

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[3]

GONDA T, 1964 IEEE EL DIV M W

[4]

HILL DE, 1965, B AM PHYS SOC, V10, P97

[5] THRESHOLD DEPENDENCY ON REABSORPTION LOSS IN INJECTION LASERS [J].

LAMORTE, MF ;

JUNKER, H ;

GONDA, T .

LUCOVSKY, G ;

VARGA, AJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (05) :491-&

[7] ABSORPTION DATA OF LASER-TYPE GAAS AT 300 DEGREES + 77 DEGREES K [J].

TURNER, WJ ;

REESE, WE .