A low-voltage sense amplifier for high-performance embedded flash memory

被引：5
|
作者：
Liu Jiang [1 ]
Wang Xueqiang [2 ]
Wang Qin [1 ]
Wu Dong [2 ]
Zhang Zhigang [2 ]
Pan Liyang [2 ]
Liu Ming [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2010年 / 31卷 / 10期
基金：
国家高技术研究发展计划(863计划);
关键词：
sense amplifier; current mode; embedded flash memory; low voltage;
D O I：
10.1088/1674-4926/31/10/105001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This paper presents a sense amplifier scheme for low-voltage embedded flash (eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.
引用
收藏
页数：5
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