A low-voltage sense amplifier for high-performance embedded flash memory

被引：5

作者：

Liu Jiang ^{[1
]}

Wang Xueqiang ^{[2
]}

Wang Qin ^{[1
]}

Wu Dong ^{[2
]}

Zhang Zhigang ^{[2
]}

Pan Liyang ^{[2
]}

Liu Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2010年 / 31卷 / 10期

基金：

国家高技术研究发展计划(863计划);

关键词：

sense amplifier; current mode; embedded flash memory; low voltage;

D O I：

10.1088/1674-4926/31/10/105001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper presents a sense amplifier scheme for low-voltage embedded flash (eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.

引用

页数：5

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