OPEN-BASE BREAKDOWN IN DIFFUSED N-P-N JUNCTION TRANSISTORS

被引：6

作者：

KENNEDY, DP

OBRIEN, RR

机构：

来源：

关键词：

D O I：

10.1080/00207216508937754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：133 / +

页数：1

共 10 条

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