ELECTRONIC CORRELATIONS AND TRANSIENT EFFECTS IN DISORDERED-SYSTEMS

被引：31
作者：
ADLER, D [1 ]
机构：
[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源：
SOLAR ENERGY MATERIALS | 1982年 / 8卷 / 1-3期
关键词：
D O I：
10.1016/0165-1633(82)90050-8
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
引用
收藏
页码：53 / 69
页数：17
相关论文
共 43 条
[1]   AMORPHOUS-SEMICONDUCTOR DEVICES [J].
ADLER, D .
SCIENTIFIC AMERICAN, 1977, 236 (05) :36-48
[2]   THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS [J].
ADLER, D ;
SHUR, MS ;
SILVER, M ;
OVSHINSKY, SR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3289-3309
[3]   DEFECTS IN AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :819-824
[4]  
ADLER D, 1972, J VAC SCI TECHNOL, V9, P1182, DOI 10.1116/1.1317009
[5]   LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D ;
YOFFA, EJ .
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11) :1920-1929
[6]   DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J].
ADLER, D .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :3-14
[7]   THEORY OF AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
SOLAR CELLS, 1980, 2 (03) :199-226
[8]  
ADLER D, 1982, HDB SEMICONDUCTORS, V1, P805
[9]  
ADLER D, 1976, AIP C P, V31, P11
[10]  
ADLER D, 1981, AIP C P, V73, P146
12345