ELECTRONIC CORRELATIONS AND TRANSIENT EFFECTS IN DISORDERED-SYSTEMS

被引：31

作者：

ADLER, D ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

SOLAR ENERGY MATERIALS | 1982年 / 8卷 / 1-3期

关键词：

D O I：

10.1016/0165-1633(82)90050-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：53 / 69

页数：17

共 43 条

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[2] THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS
ADLER, D
SHUR, MS
SILVER, M
OVSHINSKY, SR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3289 - 3309
[3] DEFECTS IN AMORPHOUS-SEMICONDUCTORS
ADLER, D
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 819 - 824
[4] ADLER D, 1972, J VAC SCI TECHNOL, V9, P1182, DOI 10.1116/1.1317009
[5] LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
ADLER, D
YOFFA, EJ
[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11): : 1920 - 1929
[6] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON
ADLER, D
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 3 - 14
[7] THEORY OF AMORPHOUS-SEMICONDUCTORS
ADLER, D
[J]. SOLAR CELLS, 1980, 2 (03): : 199 - 226
[8] ADLER D, 1982, HDB SEMICONDUCTORS, V1, P805
[9] ADLER D, 1976, AIP C P, V31, P11
[10] ADLER D, 1981, AIP C P, V73, P146