DIRECT MAPPING OF ELECTRONIC-STRUCTURE ACROSS AL0.3GA0.7AS/GAAS HETEROJUNCTIONS - BAND OFFSETS, ASYMMETRICAL TRANSITION WIDTHS, AND MULTIPLE-VALLEY BAND STRUCTURES

被引：54
作者：
GWO, S
CHAO, KJ
SHIH, CK
SADRA, K
STREETMAN, BG
机构：
[1] UNIV TEXAS, MICROELECTR RES CTR, AUSTIN, TX 78712 USA
[2] UNIV TEXAS, DEPT ELECT & COMP ENGN, AUSTIN, TX 78712 USA
来源：
PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 12期
关键词：
D O I：
10.1103/PhysRevLett.71.1883
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
By using the prototypical Al0.3Ga0.7As/GaAs system, we demonstrate the unique capability of scanning tunneling microscopy to directly map out detailed electronic structure across heterojunctions. Three novel applications are reported: (1) precise determination of band offsets, (2) measurement of asymmetrical electronic transition widths between the normal and inverted interfaces, and (3) mapping of multiple-valley band structures. Important implications of these results are discussed.
引用
收藏
页码：1883 / 1886
页数：4
相关论文
共 23 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]   TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES [J].
ALBREKTSEN, O ;
ARENT, DJ ;
MEIER, HP ;
SALEMINK, HWM .
APPLIED PHYSICS LETTERS, 1990, 57 (01) :31-33
[3]   OBSERVATION OF INTERFACE BAND-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].
BELL, LD ;
KAISER, WJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (20) :2368-2371
[4]   P2S5 PASSIVATION OF GAAS-SURFACES FOR SCANNING TUNNELING MICROSCOPY IN AIR [J].
DAGATA, JA ;
TSENG, W ;
BENNETT, J ;
SCHNEIR, J ;
HARARY, HH .
APPLIED PHYSICS LETTERS, 1991, 59 (25) :3288-3290
[5]   IMAGING OF PASSIVATED III-V-SEMICONDUCTOR SURFACES BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].
DAGATA, JA ;
TSENG, W ;
BENNETT, J ;
SCHNEIR, J ;
HARARY, HH .
ULTRAMICROSCOPY, 1992, 42 :1288-1294
[6]   CROSS-SECTIONAL IMAGING AND SPECTROSCOPY OF GAAS DOPING SUPERLATTICES BY SCANNING TUNNELING MICROSCOPY [J].
FEENSTRA, RM ;
YU, ET ;
WOODALL, JM ;
KIRCHNER, PD ;
LIN, CL ;
PETTIT, GD .
APPLIED PHYSICS LETTERS, 1992, 61 (07) :795-797
[7]   TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :923-929
[8]  
FEENSTRA RM, 1992, IN PRESS P C PHYSICA
[9]   SCANNING TUNNELING MICROSCOPY OF GAAS MULTIPLE PN JUNCTIONS [J].
GWO, S ;
SMITH, AR ;
SHIH, CK ;
SADRA, K ;
STREETMAN, BG .
APPLIED PHYSICS LETTERS, 1992, 61 (09) :1104-1106
[10]   SCANNING-TUNNELING-MICROSCOPY OF DOPING AND COMPOSITIONAL III-V HOMOSTRUCTURES AND HETEROSTRUCTURES [J].
GWO, S ;
CHAO, KJ ;
SMITH, AR ;
SHIH, CK ;
SADRA, K ;
STREETMAN, BG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04) :1509-1513
123