CARRIER CAPTURE IN QUANTUM-WELLS

被引：46

作者：

DEVEAUD, B

CHOMETTE, A

MORRIS, D

REGRENY, A

机构：

[1] Centre National d'Etudes des Télecommunications, LAB, OCM

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 85卷 / 04期

关键词：

D O I：

10.1016/0038-1098(93)90034-K

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the mechanisms of capture in quantum wells by time resolved luminescence with femtosecond resolution. The measured decay times of the barrier luminescence are always shorter than 3 ps and the well luminescence rise time is of the order of 4 ps at 100 K. These coupled results indicate that electron and hole capture is always very fast. We carry out a quantum mechanical calculation which takes into account LO phonon scattering and impurity scattering as well as hot carrier effects. The short capture times in all cases are shown to be explained by the competing influence of these different scattering processes.

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页码：367 / 371

页数：5

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