TRANSIENT SENSITIVITY COMPUTATION FOR MOSFET CIRCUITS

被引：35
作者：
HOCEVAR, DE
YANG, P
TRICK, TN
EPLER, BD
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LAB,DALLAS,TX 75265
[2] TEXAS INSTRUMENTS INC,SPICE2 CIRCUIT ANAL PROGRAM,DALLAS,TX 75265
[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[4] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1985年 / 4卷 / 04期
关键词：
D O I：
10.1109/TCAD.1985.1270161
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：609 / 620
页数：12
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