DOPANT DIFFUSION IN SILICON - A CONSISTENT VIEW INVOLVING NONEQUILIBRIUM DEFECTS

被引：199
作者：
MATHIOT, D
PFISTER, JC
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期
关键词：
D O I：
10.1063/1.332941
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3518 / 3530
页数：13
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