BLISTER FORMATION IN PD GATE MIS HYDROGEN SENSORS

被引:60
作者
ARMGARTH, M
NYLANDER, C
机构
来源
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 12期
关键词
D O I
10.1109/EDL.1982.25608
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:384 / 386
页数:3
相关论文
共 15 条
[1]   A STABLE HYDROGEN-SENSITIVE PD GATE METAL-OXIDE SEMICONDUCTOR CAPACITOR [J].
ARMGARTH, M ;
NYLANDER, C .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :91-92
[2]  
ARMGARTH M, 1982, 4TH P WORLD HYDR EN
[3]  
DANNETUN HM, COMMUNICATION
[4]  
DOBOS K, COMMUNICATION
[5]  
Lewis F. A., 1967, PALLADIUM HYDROGEN S
[6]   HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR [J].
LUNDSTROEM, I ;
SHIVARAMAN, S ;
SVENSSON, C ;
LUNDKVIST, L .
APPLIED PHYSICS LETTERS, 1975, 26 (02) :55-57
[7]   HYDROGEN SENSITIVE MOS-STRUCTURES .1. PRINCIPLES AND APPLICATIONS [J].
LUNDSTROM, I .
SENSORS AND ACTUATORS, 1981, 1 (04) :403-426
[8]   HYDROGEN SENSITIVE MOS-STRUCTURES .2. CHARACTERIZATION [J].
LUNDSTROM, I ;
SODERBERG, D .
SENSORS AND ACTUATORS, 1981, 2 (02) :105-138
[9]  
LUNDSTROM I, 1977, SURF SCI, V64, P497, DOI 10.1016/0039-6028(77)90059-0
[10]   HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR [J].
LUNDSTROM, KI ;
SHIVARAMAN, MS ;
SVENSSON, CM .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3876-3881