ON THE REACTION-MECHANISM OF GAAS MOCVD

被引：193

作者：

NISHIZAWA, J

KURABAYASHI, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 02期

关键词：

D O I：

10.1149/1.2119722

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：413 / 417

页数：5

共 8 条

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[6] MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON [J].

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[7]

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[8] VARIOUS CHEMICAL MECHANISMS FOR THE CRYSTAL-GROWTH OF III-V SEMICONDUCTORS USING COORDINATION-COMPOUNDS AS STARTING MATERIAL IN THE MOCVD PROCESS [J].

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