INFLUENCE OF DEVICE FABRICATION PARAMETERS ON GRADUAL DEGRADATION OF (AIGA)AS CW LASER-DIODES

被引：55

作者：

LADANY, I ^{[1
]}

KRESSEL, H ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 12期

关键词：

D O I：

10.1063/1.1655370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：708 / 710

页数：3

共 14 条

[1] HERMITE-GAUSSIAN MODE PATTERNS IN GAAS JUNCTION LASERS [J].

DYMENT, JC .

APPLIED PHYSICS LETTERS, 1967, 10 (03) :84-&

[2] CONTROL OF FACET DAMAGE IN GAAS LASER DIODES [J].

ETTENBERG, M ;

SOMMERS, HS ;

KRESSEL, H ;

LOCKWOOD, HF .

APPLIED PHYSICS LETTERS, 1971, 18 (12) :571-+

[3] DEGRADATION OF ALXGA1-X AS HETEROJUNCTION ELECTROLUMINESCENT DEVICES [J].

ETTENBERG, M ;

KRESSEL, H ;

LOCKWOOD, HF .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :82-85

[4]

ETTENBERG M, 1973, TECHNICAL DIGEST, P317

[5] ULTIMATE LOWER LIMIT OF ATTENUATION IN GLASS OPTICAL WAVEGUIDES [J].

KECK, DB ;

MAURER, RD ;

SCHULTZ, PC .

APPLIED PHYSICS LETTERS, 1973, 22 (07) :307-309

[6] CATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

KRESSEL, H ;

MIEROP, H .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5419-&

[7]

KRESSEL H, 1971, RCA REV, V32, P393

[8] EVIDENCE FOR ROLE OF CERTAIN METALLURGICAL FLAWS IN ACCELERATING ELECTROLUMINESCENT DIODE DEGRADATION [J].

KRESSEL, H ;

BYER, NE ;

LOCKWOOD, H ;

HAWRYLO, FZ ;

NELSON, H ;

ABRAHAMS, MS ;

MCFARLAN.SH .

METALLURGICAL TRANSACTIONS, 1970, 1 (03) :635-&

[9]

KRESSEL H, 1974, J PHYSIQUE S4, V35, pC3

[10]

KRESSEL H, 1974, APPL PHYS LETT, V25, P82

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