INTRINSIC NOISE OF THE SINGLE-ELECTRON TRANSISTOR

被引：203

作者：

KOROTKOV, AN ^{[1
]}

机构：

[1] SUNY STONY BROOK, DEPT PHYS, STONY BROOK, NY 11794 USA

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.49.10381

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper is devoted to calculation of the ''classical'' (thermal and/or shot) intrinsic noise of the single-electron transistor (SET) caused by the stochastic character of electron tunneling. Exact solution of the master equation describing the dynamics of the SET is obtained in the frequency representation. The low-frequency limit for the spectral calculations is considered in detail.

引用

页码：10381 / 10392

页数：12

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