ANALYTICAL DEVICE MODEL OF SOI MOSFETS INCLUDING SELF-HEATING EFFECT

被引：33

作者：

YASUDA, N ^{[1
]}

UENO, S ^{[1
]}

TANIGUCHI, K ^{[1
]}

HAMAGUCHI, C ^{[1
]}

YAMAGUCHI, Y ^{[1
]}

NISHIMURA, T ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CO,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

SOI MOSFET; NEGATIVE DIFFERENTIAL CONDUCTANCE; TEMPERATURE RISE; SELF-HEATING; DEVICE CHARACTERISTICS; TRANSIENT DRAIN CURRENT;

D O I：

10.1143/JJAP.30.3677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple analytical model for device characteristics of silicon-on-insulator (SOI) MOSFETs is proposed. The effect of the self-heating is incorporated into a pseudo-2-dimensional drain-current model through an analytical expression using a thermal distribution-constant circuit. The device characteristics calculated with the model were found to agree well with experimental drain-current characteristics.

引用

页码：3677 / 3684

页数：8

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