SWITCHING DUE TO LOCAL APPEARANCE OF AN S-TYPE NEGATIVE DIFFERENTIAL RESISTANCE

被引：0
|
作者：
KOSTYLEV, SA
KODZHESPIROVA, IF
SHKUT, VA
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 12期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A phenomenological model of the effect of a conducting inhomogeneity (channel) on the threshold parameters of switching in media with an S-type negative differential resistance is applied specifically to chalocogenide semiconductors. Criteria for conversion of a channel into a filament are formulated. it is shown that the model agrees with experimental results.
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页码：1315 / 1318
页数：4
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