PHONON DENSITY OF STATES IN AMORPHOUS SI0.5GE0.5

被引：1
|
作者：
GUPTA, HC
REDDY, GSN
TRIPATHI, BB
机构：
[1] Indian Inst of Technology, New Delhi, India, Indian Inst of Technology, New Delhi, India
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1986年 / 134卷 / 01期
关键词：
PHONONS - SEMICONDUCTOR MATERIALS - Phase Transitions - SPECTROSCOPY; RAMAN;
D O I：
10.1002/pssb.2221340103
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The angular force model is used to investigate phonon density of states of a-Si//0//. //5Ge//0//. //5 by considering only the first nearest neighbour interactions. A force constant decrease of the order of only 5% is observed when the phase changes from crystalline to amorphous system. The relevance of the obtained results to the Raman spectra is discussed.
引用
收藏
页码：17 / 20
页数：4
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