THE THERMAL-STABILITY OF AIN

被引：72

作者：

ABID, A

BENSALEM, R

SEALY, BJ

机构：

[1] Univ of Surrey, Guildford, Engl, Univ of Surrey, Guildford, Engl

来源：

JOURNAL OF MATERIALS SCIENCE | 1986年 / 21卷 / 04期

关键词：

D O I：

10.1007/BF00553267

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1301 / 1304

页数：4

共 9 条

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[2]

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[4]

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[5]

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[6]

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[7] COMPOSITION, KINETICS, AND MECHANISM OF GROWTH OF CHEMICAL VAPOR-DEPOSITED ALUMINUM NITRIDE FILMS [J].

PAULEAU, Y ;

BOUTEVILLE, A ;

HANTZPERGUE, JJ ;

REMY, JC ;

CACHARD, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1045-1052

[8]

SAMSONOV GV, 1980, HDB REFRACTORY COMPO, P386

[9] GROWTH OF HIGH-PURITY AIN CRYSTALS [J].

SLACK, GA ;

MCNELLY, TF .

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