ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE

被引：88

作者：

WINDHORN, TH

METZE, GM

TSAUR, BY

FAN, JCC

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：309 / 311

页数：3

共 6 条

[1]

CARNEY J, 1983, P SOC PHOTO-OPT INST, V408, P121, DOI 10.1117/12.935715

[2] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J].

CHOI, HK ;

TSAUR, BY ;

METZE, GM ;

TURNER, GW ;

FAN, JCC .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :207-208

[3] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J].

GALE, RP ;

FAN, JCC ;

TSAUR, BY ;

TURNER, GW ;

DAVIS, FM .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :169-171

[4] LARGE AREA ION-BEAM ASSISTED ETCHING OF GAAS WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY [J].

LINCOLN, GA ;

GEIS, MW ;

PANG, S ;

EFREMOW, NN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1043-1046

[5] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS [J].

SHINODA, Y ;

NISHIOKA, T ;

OHMACHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L450-L451

[6]

TOMASETTA LR, 1983, P SOC PHOTO-OPT INS, V321, P110

← 1 →