ANISOTROPIC DRIFT MOBILITY IN HYDROGENATED AMORPHOUS-SILICON

被引:9
作者
PARKER, MA
SCHIFF, EA
机构
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 17期
关键词
D O I
10.1103/PhysRevB.37.10426
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:10426 / 10428
页数:3
相关论文
共 50 条
[41]   DEFECT RELAXATION IN HYDROGENATED AMORPHOUS-SILICON [J].
CRANDALL, RS .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :597-599
[42]   OPTICAL BISTABILITY IN HYDROGENATED AMORPHOUS-SILICON [J].
TANN, J ;
GAL, M ;
MEANEY, K ;
TAYLOR, PC .
APPLIED PHYSICS LETTERS, 1990, 56 (11) :1017-1018
[43]   DOPING AND PSEUDODOPING OF HYDROGENATED AMORPHOUS-SILICON [J].
GOLIKOVA, OA .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (09) :915-926
[44]   HYDROGENATED AMORPHOUS-SILICON DOPED WITH DYSPROSIUM [J].
KULIKOV, GS ;
MEZDROGINA, MM ;
PERSHEEV, SK ;
ABDURAKHMANOV, KP .
SEMICONDUCTORS, 1993, 27 (06) :583-584
[45]   A STRUCTURAL MODEL OF HYDROGENATED AMORPHOUS-SILICON [J].
DRCHAL, V ;
MALEK, J .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 62 (03) :271-287
[46]   STRUCTURAL MODEL FOR HYDROGENATED AMORPHOUS-SILICON [J].
WEAIRE, D ;
WOOTEN, F .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :495-500
[47]   HYDROGENATED AMORPHOUS-SILICON AS A BINARY ALLOY [J].
TAGUENAMARTINEZ, J ;
BARRIO, RA ;
CASTILLOALVARADO, FL .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (11) :1679-1688
[48]   NOISE IN HYDROGENATED AMORPHOUS-SILICON RESISTORS [J].
KIM, SK ;
VANDERZIEL, A .
PHYSICA B & C, 1980, 98 (04) :303-305
[49]   BOND CPA FOR HYDROGENATED AMORPHOUS-SILICON [J].
BARRIO, RA ;
SANSORES, LE ;
ELLIOTT, RJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :177-180
[50]   RECENT RESULTS ON HYDROGENATED AMORPHOUS-SILICON [J].
STUKE, J .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1985, 15 :79-102