SURFACE-STATES AND BARRIER HEIGHT AT METAL-GAAS INTERFACE

[1] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[2] HANDU VK, 1972, J I TELECOMMUN ENG, V18, P527

[3] DETERMINATION OF SI-METAL WORK FUNCTION DIFFERENCES BY MOS CAPACITANCE TECHNIQUE [J]. SOLID-STATE ELECTRONICS, 1975, 18 (02) : 169 - 181

[4] PHYSICAL-PROPERTIES OF AU-ZNSE METAL-SEMICONDUCTOR CONTACT [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (02): : 567 - 573

[5] MILNES AG, 1972, HETEROJUNCTIONS META, P158

[6] HIGH-TEMPERATURE STABILITY OF AU PT-N-GAAS SCHOTTKY-BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 869 - 876

[7] ELECTRICAL CHARCTERISTICS OF GAASP SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1319 - +

[8] THERMIONIC EMISSION IN AU-GAAS SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 193 - +

[9] Sze S.M., 1969, PHYS SEMICONDUCTOR D, P366

[10] SZE SM, 1969, PHYSICS SEMICONDUCTO, P380

[1] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[2] HANDU VK, 1972, J I TELECOMMUN ENG, V18, P527

[3] DETERMINATION OF SI-METAL WORK FUNCTION DIFFERENCES BY MOS CAPACITANCE TECHNIQUE [J]. SOLID-STATE ELECTRONICS, 1975, 18 (02) : 169 - 181

[4] PHYSICAL-PROPERTIES OF AU-ZNSE METAL-SEMICONDUCTOR CONTACT [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (02): : 567 - 573

[5] MILNES AG, 1972, HETEROJUNCTIONS META, P158

[6] HIGH-TEMPERATURE STABILITY OF AU PT-N-GAAS SCHOTTKY-BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 869 - 876

[7] ELECTRICAL CHARCTERISTICS OF GAASP SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1319 - +

[8] THERMIONIC EMISSION IN AU-GAAS SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 193 - +

[9] Sze S.M., 1969, PHYS SEMICONDUCTOR D, P366

[10] SZE SM, 1969, PHYSICS SEMICONDUCTO, P380