GROWTH OF CDTE-FILMS ON SILICON BY MOLECULAR-BEAM EPITAXY

被引:57
作者
LO, Y [1 ]
BICKNELL, RN [1 ]
MYERS, TH [1 ]
SCHETZINA, JF [1 ]
STADELMAIER, HH [1 ]
机构
[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650
关键词
D O I
10.1063/1.332529
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:4238 / 4240
页数:3
相关论文
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