GROWTH OF CDTE-FILMS ON SILICON BY MOLECULAR-BEAM EPITAXY

被引：57

作者：

LO, Y ^{[1
]}

BICKNELL, RN ^{[1
]}

MYERS, TH ^{[1
]}

SCHETZINA, JF ^{[1
]}

STADELMAIER, HH ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

来源：

关键词：

D O I：

10.1063/1.332529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4238 / 4240

页数：3

共 10 条

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[2] CDXHG1-XTE N-TYPE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 264 - 266
[3] FAURIE JP, 1981, J CRYST GROWTH, V54, P581
[4] EPITAXIAL-GROWTH AND STRUCTURE OF FILMS OF CDTE EVAPORATED IN VACUUM ON TO SILICON
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ABDALLA, MI
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : 507 - 512
[5] LO YC, 1982, B AM PHYS SOC, V27, P751
[6] MAGEE T, COMMUNICATION
[7] PROPERTIES OF CDTE/INSB HETEROSTRUCTURES PREPARED BY MOLECULAR-BEAM EPITAXY
MYERS, TH
LO, Y
SCHETZINA, JF
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 9232 - 9234
[8] OPTICAL-PROPERTIES OF POLYCRYSTALLINE CDTE-FILMS
MYERS, TH
EDWARDS, SW
SCHETZINA, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4231 - 4237
[9] MYERS TH, 1982, B AM PHYS SOC, V27, P751
[10] MYERS TH, 1983, APPL PHYS LETT, V42, P237