A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors

被引：14

作者：

Galloway, Kenneth F. ^{[1
,2
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37235 USA

来源：

ELECTRONICS | 2014年 / 3卷 / 04期

关键词：

power transistors; VDMOS; UMOS; MOSFET; radiation effects; space electronics; microdose; SEB; SEGR;

D O I：

10.3390/electronics3040582

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Silicon VDMOS power MOSFET technology is being supplanted by UMOS (or trench) power MOSFET technology. Designers of spaceborne power electronics systems incorporating this newer power MOSFET technology need to be aware of several unique threats that this technology may encounter in space. Space radiation threats to UMOS power devices include vulnerabilities to SEB, SEGR, and microdose. There have been relatively few studies presented or published on the effects of radiation on this device technology. The S-O-A knowledge of UMOS power device degradation and failure under heavy-ion exposure is reviewed.

引用

收藏

页码：582 / 593

页数：12

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