GROWTH OF EPITAXIAL GAAS STRUCTURES FOR HIGH-EFFICIENCY IMPATTS

被引：19

作者：

LUTHER, LC ^{[1
]}

DILORENZO, JV ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 06期

关键词：

D O I：

10.1149/1.2134319

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：760 / 769

页数：10

共 25 条

[1]

Carslaw H.S., 1959, CONDUCTION HEAT SOLI, P50

[2] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J].

DILORENZO, JV .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :189-+

[3] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

[4]

DILORENZO JV, 1974, 5TH P INT S GAAS REL

[5]

GOLDSMITH N, 1963, RCA REV, V24, P546

[6]

HIRSCHFELDER JO, 1954, MOLECULAR THEORY GAS

[7]

HOWER PL, 1971, SEMICONDUCTORS SEMIM, V7, P167

[8]

IRVIN JC, 1973, 4TH P BIENN CORN EL, P287

[9] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J].

JOHNSON, WC ;

PANOUSIS, PT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :965-&

[10] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].

KENNEDY, DP ;

MURLEY, PC ;

KLEINFELDER, W .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) :399-+

← 1 2 3 →