RAMAN-SPECTROSCOPY OF CARBON-FILMS GROWN BY PULSED LASER EVAPORATION OF GRAPHITE

Raman spectroscopy has been used to characterize carbon films grown on silicon by the pulsed laser evaporation of graphite targets. Spectra from films of thickness ranging from 1 nm to a few micrometers have been analysed. The influence of the deposition geometry has been investigated by varying the angle between the target-substrate direction and the normal to the target surface. At increasing substrate temperatures, the spectra evolve from diamond-like to glassy carbon and to carbide. For 1 nm films, a relatively uncommon has been observed line at 1470 cm-1. © 1992.