LARGE REFRACTIVE-INDEX CHANGES IN TUNABLE-ELECTRON-DENSITY INGAAS/INALAS QUANTUM WELLS

被引：40

作者：

ZUCKER, JE

CHANG, TY

WEGENER, M

SAUER, NJ

JONES, KL

CHEMLA, DS

机构：

[1] AT&T Bell Laboratories, Holmdel

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 01期

关键词：

D O I：

10.1109/68.47032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present measurements of electrorefraction and electroabsorption in a novel multiple quantum well waveguide structure in which each InGaAs quantum well is provided with an individual electron reservoir. External bias transfers electrons into the wells, thus quenching the absorption and producing a refractive index change at wavelengths below the bandedge which is linear in the applied voltage. We demonstrate that in this type of structure both the change in refractive index per applied field and the ratio of optical phase to intensity modulation can be significantly enhanced over those found in the quantum confined Stark effect. © 1990 IEEE

引用

页码：29 / 31

页数：3

共 12 条

[1]

CASEY HC, 1978, HETEROSTRUCTURE LA B, P52

[2] OPTICAL READING OF FIELD-EFFECT TRANSISTORS BY PHASE-SPACE ABSORPTION QUENCHING IN A SINGLE INGAAS QUANTUM-WELL CONDUCTING CHANNEL [J].