EVIDENCE FOR THE OCCURRENCE OF SUBCUTANEOUS OXIDATION DURING LOW-TEMPERATURE REMOTE PLASMA ENHANCED DEPOSITION OF SILICON DIOXIDE FILMS

被引：45

作者：

FOUNTAIN, GG ^{[1
]}

HATTANGADY, SV ^{[1
]}

RUDDER, RA ^{[1
]}

MARKUNAS, RJ ^{[1
]}

LUCOVSKY, G ^{[1
]}

KIM, SS ^{[1
]}

TSU, DV ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575892

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：576 / 580

页数：5

共 7 条

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[6] OPTICAL-EMISSION AND MASS SPECTROSCOPIC STUDIES OF THE GAS-PHASE DURING THE DEPOSITION OF SIO2 AND A-SI-H BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

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[7] GATING OF GERMANIUM SURFACES USING PSEUDOMORPHIC SILICON INTERLAYERS [J].

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