HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS

被引：20

作者：

SADLER, RA ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 07期

关键词：

D O I：

10.1109/EDL.1983.25710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：215 / 217

页数：3

共 7 条

[1] MONTE-CARLO PARTICLE SIMULATION OF A GAAS SHORT-CHANNEL MESFET [J].

AWANO, Y ;

TOMIZAWA, K ;

HASHIZUME, N ;

KAWASHIMA, M .

ELECTRONICS LETTERS, 1983, 19 (01) :20-21

[2]

FLAHIVE PG, 1982, NOV GAAS IC S, P184

[3] SELF-ALIGNED SUB-MICRON GATE DIGITAL GAAS INTEGRATED-CIRCUITS [J].

LEVY, HM ;

LEE, RE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :102-104

[4] A SUB-MICRON SELF-ALIGNED GAAS-MESFET TECHNOLOGY FOR DIGITAL INTEGRATED-CIRCUITS [J].

LEVY, HM ;

LEE, RE ;

SADLER, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) :1687-1687

[5]

LEVY HM, 1982, JUN P DEV RES C FT C

[6] PROXIMATE CAPLESS ANNEALING OF GAAS USING A CONTROLLED-EXCESS AS VAPOR-PRESSURE SOURCE [J].

WOODALL, JM ;

RUPPRECHT, H ;

CHICOTKA, RJ ;

WICKS, G .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :639-641

[7] CAPPED VERSUS CAPLESS HEAT-TREATMENT OF MOLECULAR-BEAM EPITAXIAL GAAS [J].

XIN, SH ;

SCHAFF, WJ ;

WOOD, CEC ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :742-744

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