EVOLUTION OF MONOLAYER TERRACE TOPOGRAPHY ON (100) GAAS ANNEALED UNDER AN ARSINE HYDROGEN AMBIENT

被引：28

作者：

EPLER, JE

JUNG, TA

SCHWEIZER, HP

机构：

[1] Paul Scherrer Institute Zurich, CH-8048 Zurich

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.109352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The topographical evolution of the (100) GaAs surface annealed under an arsine/hydrogen ambient is studied by in situ orientation-resolved light scattering and ex situ atomic force microscopy (AFM). The light scattering system provides real-time monitoring of the magnitude and crystal orientation of topographical features of 0.3 mum scale. The AFM images of the GaAs surface, quenched at various annealing temperatures, vividly depict the randomly oriented high density monolayer steps evolving into an atomically smooth terracelike structure.

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页码：143 / 145

页数：3

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