GROWTH-CHARACTERISTICS OF SILICON DIOXIDE PRODUCED BY RAPID THERMAL-OXIDATION PROCESSES

被引：20

作者：

CHIOU, YL ^{[1
]}

SOW, CH ^{[1
]}

LI, G ^{[1
]}

PORTS, KA ^{[1
]}

机构：

[1] HARRIS SEMICOND INC,MELBOURNE,FL 32902

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 09期

关键词：

D O I：

10.1063/1.104265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon dioxide growth curves produced by a rapid thermal processor were analyzed. No break point was observed in the growth curves. Of the kinematical models being compared, the linear-parabolic equation gave the best fit. However, the coefficients of the equation are thickness dependent as in the case of diffusion furnace oxide growth data. The correlation in the growth curves indicated similar oxide growth kinematics for the two types of oxidation equipment. Under certain oxidation conditions, the coefficient of the linear term may have a negative value and appears to be determined by the oxidation temperature and oxygen flow rate.

引用

页码：881 / 883

页数：3

共 17 条

[1] THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS [J].