PHONON ATTENUATION IN HEAVILY DOPED P-TYPE SEMICONDUCTORS

被引：3

作者：

SOTA, T

SUZUKI, K

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 15期

关键词：

D O I：

10.1088/0022-3719/17/15/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2661 / 2680

页数：20

共 10 条

[1]

BIR GI, 1962, SOV PHYS-SOL STATE, V4, P867

[2]

Bir GL., 1974, SYMMETRY STRAIN INDU

[3] DIELECTRIC-CONSTANT AND PLASMA FREQUENCY OF P-TYPE GE LIKE SEMICONDUCTORS [J].

COMBESCOT, M ;

NOZIERES, P .

SOLID STATE COMMUNICATIONS, 1972, 10 (03) :301-+

[4] THERMAL CONDUCTIVITY OF HEAVILY DOPED P-TYPE INSB AT LIQUID-HELIUM TEMPERATURES [J].

CROSBY, CR ;

GRENIER, CG .

PHYSICAL REVIEW B, 1971, 4 (04) :1258-&

[5] THERMAL-CONDUCTIVITY OF HEAVILY DOPED P-TYPE INSB DOWN TO 0.38K [J].

FOZOONI, P ;

ZEBOUNI, NH ;

GRENIER, CG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (23) :4285-4295

[6] DEFORMATION POTENTIAL IN GERMANIUM FROM OPTICAL ABSORPTION LINES FOR EXCITON FORMATION [J].

KLEINER, WH ;

ROTH, LM .

PHYSICAL REVIEW LETTERS, 1959, 2 (08) :334-336

[7] QUANTUM THEORY OF CYCLOTRON RESONANCE IN SEMICONDUCTORS - GENERAL THEORY [J].

LUTTINGER, JM .

PHYSICAL REVIEW, 1956, 102 (04) :1030-1041

[8] DAMPING OF ELECTRON-HOLE-DROPLET MOTION .1. DEFORMATION POTENTIAL SCATTERING [J].

PAN, DS ;

SMITH, DL ;

MCGILL, TC .

PHYSICAL REVIEW B, 1978, 17 (08) :3284-3296

[9] PHONON ATTENUATION IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].

SOTA, T ;

SUZUKI, K .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (34) :6991-7002

[10] PHONON ATTENUATION IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS .2. THE EFFECT OF MASS ANISOTROPY [J].

SOTA, T ;

SUZUKI, K .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (22) :4347-4364

← 1 →