DEGRADATION OF THE POLY-SI SILICIDE STRUCTURE IN ADVANCED MOS-TECHNOLOGIES

被引：10
|
作者：
LIPPENS, P
MAEX, K
VANDENHOVE, L
DEKEERSMAECKER, R
PROBST, V
KOPPENOL, W
VANDERWEG, W
机构：
[1] SIEMENS AG,CENT RES & DEV,D-8000 MUNICH 83,FED REP GER
[2] STATE UNIV UTRECHT,DEPT ATOM & INTERFACE PHYS,3508 TA UTRECHT,NETHERLANDS
来源：
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
关键词：
D O I：
10.1051/jphyscol:1988439
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：191 / 194
页数：4
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