CHARACTERISTICS OF DISLOCATIONS AT STRAINED HETEROEPITAXIAL INGAAS/GAAS INTERFACES

被引：113
作者：
CHANG, KH [1 ]
BHATTACHARYA, PK [1 ]
GIBALA, R [1 ]
机构：
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期
关键词：
D O I：
10.1063/1.344183
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2993 / 2998
页数：6
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