CHARACTERISTICS OF DISLOCATIONS AT STRAINED HETEROEPITAXIAL INGAAS/GAAS INTERFACES

被引：113
作者：
CHANG, KH [1 ]
BHATTACHARYA, PK [1 ]
GIBALA, R [1 ]
机构：
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期
关键词：
D O I：
10.1063/1.344183
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2993 / 2998
页数：6
相关论文
共 33 条
[1]   DISLOCATIONS IN VAPOR-GROWN COMPOSITIONALLY GRADED (IN,GA)P [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ ;
OLSEN, GH .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4259-4270
[2]   LIKE-SIGN ASYMMETRIC DISLOCATIONS IN ZINC-BLENDE STRUCTURE [J].
ABRAHAMS, MS ;
BLANC, J ;
BUIOCCHI, CJ .
APPLIED PHYSICS LETTERS, 1972, 21 (05) :185-&
[3]   DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].
ABRAHAMS, MS ;
WEISBERG, LR ;
BUIOCCHI, CJ ;
BLANC, J .
JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&
[4]   MISFIT DISLOCATION-STRUCTURE OF AN INGAAS/GAAS HETEROJUNCTION WITH LOW MISFIT [J].
AHEARN, JS ;
LAIRD, C ;
BALL, CAB .
THIN SOLID FILMS, 1977, 42 (01) :117-125
[5]   TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF MISFIT DISLOCATIONS IN GAASP EPITAXIAL-FILMS [J].
AHEARN, JS ;
LAIRD, C .
JOURNAL OF MATERIALS SCIENCE, 1977, 12 (04) :699-707
[6]  
AMELINCKX S, 1979, DISLOCATIONS SOLIDS, V2, P435
[7]   ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].
BERGER, PR ;
CHANG, K ;
BHATTACHARYA, P ;
SINGH, J ;
BAJAJ, KK .
APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686
[8]   NATURE, ORIGIN AND EFFECT OF DISLOCATIONS IN EPITAXIAL SEMICONDUCTOR LAYERS [J].
BOOKER, GR ;
TITCHMARSH, JM ;
FLETCHER, J ;
DARBY, DB ;
HOCKLY, M ;
ALJASSIM, M .
JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :407-425
[9]   TRANSMISSION ELECTRON-MICROSCOPY OF STRAINED INYGA1-YAS/GAAS MULTIQUANTUM WELLS - THE GENERATION OF MISFIT DISLOCATIONS [J].
CHANG, KH ;
BHATTACHARYA, PK ;
GIBALA, R .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) :3391-3394
[10]   NATURE OF MISFIT DISLOCATION SOURCES IN STRAINED-LAYER SEMICONDUCTOR STRUCTURES [J].
DODSON, BW .
APPLIED PHYSICS LETTERS, 1988, 53 (05) :394-396
1234