NEEDLE-LIKE CRYSTALLIZATION OF NI DOPED AMORPHOUS-SILICON THIN-FILMS

被引：30

作者：

HEMPEL, T ^{[1
]}

SCHOENFELD, O ^{[1
]}

SYROWATKA, F ^{[1
]}

机构：

[1] MARTIN LUTHER UNIV,FACHBEREICH PHYS CHEM,O-4020 HALLE,GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 85卷 / 11期

关键词：

D O I：

10.1016/0038-1098(93)90704-Q

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The crystallization behaviour of Ni doped co-sputtered amorphous silicon thin films (MSP a-Si(Ni)) is investigated by means of NIR-VIS-UV transmission spectroscopy and STEM. Using the change in optical transmission spectra of crystallized a-Si(Ni) thin films the crystallization kinetics is described. During a thermal annealing process the crystalline phase forms at one edge of the sample and then extends across the whole thin film, At the crystallization frontier a needle morphology of single crystals is observed with STEM which may result from solid state diffusion of nickel through the amorphous matrix. Using a long term thermal treatment we achieve the formation of extensive monocrystalline networks.

引用

页码：921 / 924

页数：4

共 6 条

[1]

Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[2] SILICIDE PRECIPITATION AND SILICON CRYSTALLIZATION IN NICKEL IMPLANTED AMORPHOUS-SILICON THIN-FILMS [J].

CAMMARATA, RC ;

THOMPSON, CV ;

HAYZELDEN, C ;

TU, KN .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (10) :2133-2138

[3]

MURARKA SP, 1983, SILICIDES VLSI APPLI

[4]

NYGREN E, 1988, MAT RES SOC S P, V100

[5]

TU KN, 1986, ADV ELECT MAT, P147

[6] MESOTAXY - SINGLE-CRYSTAL GROWTH OF BURIED COSI2 LAYERS [J].

WHITE, AE ;

SHORT, KT ;

DYNES, RC ;

GARNO, JP ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1987, 50 (02) :95-97

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