CALCULATION OF BULK AND SURFACE ELECTRONIC-PROPERTIES OF DIAMOND-LIKE SEMICONDUCTORS

被引：4

作者：

GADIYAK, GV ^{[1
]}

KARPUSHIN, AA ^{[1
]}

MOROKOV, YN ^{[1
]}

TOMASEK, M ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, J HEYROVSKY INST PHYS CHEM & ELECTROCHEM, CS-12138 PRAGUE 2, CZECHOSLOVAKIA

来源：

COLLECTION OF CZECHOSLOVAK CHEMICAL COMMUNICATIONS | 1984年 / 49卷 / 03期

关键词：

D O I：

10.1135/cccc19840666

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：666 / 672

页数：7

共 15 条

[1]

ANDERSON PA, 1977, 7TH P INT C AM LIQ S, P334

[2]

BOLSHOV LA, 1977, USP FIZ NAUK+, V122, P125

[3]

BOURGOIN J, 1983, SOLID STATE SCI SER, V35

[4] STEP-FORMATION ENERGIES AND DOMAIN ORIENTATIONS AT SI(111) SURFACES [J].

CHADI, DJ ;

CHELIKOWSKY, JR .

PHYSICAL REVIEW B, 1981, 24 (08) :4892-4895

[5] THE INFLUENCE OF HYDROGEN SATURATION ON THE LOCAL-DENSITIES OF STATES IN SMALL SI, GE AND GAAS CLUSTERS [J].

DEMEYER, G ;

HOOGEWIJS, R ;

LAMBRECHT, W ;

VENNIK, J ;

DALMAI, G .

SURFACE SCIENCE, 1981, 106 (1-3) :498-508

[6] ELECTRONIC-STRUCTURE BASED ON LOCAL ATOMIC ENVIRONMENT FOR TIGHT-BINDING BANDS [J].

HAYDOCK, R ;

HEINE, V ;

KELLY, MJ .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (20) :2845-&

[7] STUDY OF THE SURFACE STATES OF DIAMOND AND GRAPHITE BY A SIMPLE MO-LCAO METHOD [J].

KOUTECKY, J ;

TOMASEK, M .

PHYSICAL REVIEW, 1960, 120 (04) :1212-1218

[8] CONTRIBUTION TO THE THEORY OF THE SHOCKLEY SURFACE STATES .1. GENERAL FORMULATION AND THE CASE OF ZERO DEFORMATION OF THE POTENTIAL ON THE GOODWIN-ARTMANN MODEL [J].

KOUTECKY, J ;

TOMASEK, M .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :241-247

[9] ELECTRON-STATES AT PLANAR AND STEPPED SEMICONDUCTOR SURFACES [J].

LOUIS, E ;

YNDURAIN, F .

PHYSICAL REVIEW B, 1977, 16 (04) :1542-1551

[10] SURFACE AND BULK CONTRIBUTIONS TO ULTRAVIOLET PHOTOEMISSION SPECTRA OF SILICON [J].

ROWE, JE ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1974, 32 (08) :421-424

← 1 2 →