HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE

被引：174

作者：

DAPKUS, PD ^{[1
]}

MANASEVIT, HM ^{[1
]}

HESS, KL ^{[1
]}

LOW, TS ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90265-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：10 / 23

页数：14

共 27 条

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[8] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1977, 31 (03) :201-203

[9] PHOTOPUMPED LASER OPERATION OF MO-CVD ALXGA1-XAS NEAR A GAAS QUANTUM WELL (LAMBDA-GREATER-THAN-OR-EQUAL-TO 6200-A, 77-DEGREE-K) [J].

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[10]

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