ELECTRON-BEAM LITHOGRAPHIC FABRICATION OF ULTRA-SUBMICRON GATE GAAS-MESFETS

被引:8
作者
BERNSTEIN, G
FERRY, DK
机构
关键词
D O I
10.1016/0749-6036(86)90079-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:147 / 150
页数:4
相关论文
共 9 条
[1]  
BARKER JR, 1981, SOLID STATE ELECTRON, V28, P519
[2]  
CHOU SY, IN PRESS
[3]  
GORONKIN H, 1985, GAAS TECHNOLOGY
[4]  
GRUBIN HL, 1981, P INT ELECTRON DEVIC, P633
[6]   VERY SHORT GATE-LENGTH GAAS-MESFETS [J].
PATRICK, W ;
MACKIE, WS ;
BEAUMONT, SP ;
WILKINSON, CDW ;
OXLEY, CH .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :471-472
[7]  
REICH RK, 1982, ELECTRON DEVIC LETT, V3, P381, DOI 10.1109/EDL.1982.25607
[8]  
SWARTZ RG, 1982, P INT ELECTRON DEVIC, P642
[9]  
1983, 6940B5 HEWL PACK PRO