MICROSTRUCTURAL INVESTIGATIONS OF REFRACTORY-METAL SILICIDE FILMS ON SILICON

被引：16

作者：

MAGEE, TJ ^{[1
]}

WOOLHOUSE, GR ^{[1
]}

KAWAYOSHI, HA ^{[1
]}

NIEMEYER, IC ^{[1
]}

RODRIGUES, B ^{[1
]}

ORMOND, RD ^{[1
]}

机构：

[1] NATL SEMICOND CORP,SANTA CLARA,CA 95051

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582874

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：756 / 761

页数：6

共 9 条

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[3] PROPERTIES OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J].

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BOWER, DH ;

VANART, RL ;

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[4]

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[5] HEXAGONAL WSI2 IN CO-SPUTTERED (TUNGSTEN AND SILICON) MIXTURE [J].

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[6]

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[7]

STIMMELL JB, 1984, UNPUB THIN SOLID FIL

[8] PROPERTIES OF TUNGSTEN SILICIDE FILM ON POLYCRYSTALLINE SILICON [J].

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[9]

1977, POWDER DIFFRACTION F

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