CURRENT-VOLTAGE CHARACTERISTICS OF MOS FIELD-EFFECT TRANSISTORS .1. LINEAR REGION

被引：2

作者：

SCHWAB, H ^{[1
]}

机构：

[1] UNIV STUTTGART, INST HALBLEITER TECH, D-7000 STUTTGART 1, BUNDES REPUBLIK

来源：

ARCHIV FUR ELEKTROTECHNIK | 1976年 / 58卷 / 02期

关键词：

D O I：

10.1007/BF01574193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：97 / 102

页数：6

共 50 条

[1] CURRENT-VOLTAGE CHARACTERISTICS OF MOS FIELD-EFFECT TRANSISTORS IN LINEAR AND SATURATION REGION
SCHWAB, H
ELECTRONICS LETTERS, 1974, 10 (17) : 356 - 358
[2] CURRENT-VOLTAGE CHARACTERISTICS OF MOS FIELD-EFFECT TRANSISTORS .2. SATURATION REGION
SCHWAB, H
ARCHIV FUR ELEKTROTECHNIK, 1976, 58 (02): : 103 - 106
[3] CURRENT-VOLTAGE CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS WITH SHORT CHANNELS
HESS, K
DORDA, G
SAH, CT
SOLID STATE COMMUNICATIONS, 1976, 19 (05) : 471 - 473
[4] THE CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
BALDIN, VA
LAZUNIN, YA
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1991, 46 (09) : 71 - 73
[5] Extracting parameters from the current-voltage characteristics of field-effect transistors
Horowitz, G
Lang, P
Mottaghi, M
Aubin, H
ADVANCED FUNCTIONAL MATERIALS, 2004, 14 (11) : 1069 - 1074
[6] Current-voltage characteristics of Schottky-gate field-effect transistors
Baldin, V.A.
Lazunin, Yu.A.
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1991, 46 (09): : 71 - 73
[7] Influence of Gate Dielectrics of Field-Effect Graphene Transistors on Current-Voltage Characteristics
Abramov I.I.
Kolomeitseva N.V.
Labunov V.A.
Romanova I.A.
Shcherbakova I.Y.
Russian Microelectronics, 2021, 50 (02) : 118 - 125
[8] CURRENT-VOLTAGE CHARACTERISTICS OF INSITU DOPED POLYCRYSTALLINE DIAMOND FIELD-EFFECT TRANSISTORS
TESSMER, AJ
PLANO, LS
DREIFUS, DL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2666 - 2667
[9] Effect of Uniaxial Strain on the Current-Voltage Characteristics of Graphene Nanoribbon Field-Effect Transistors
Kliros, George S.
2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 2013, : 27 - 30
[10] Current-voltage characteristics in organic field-effect transistors. Effect of interface dipoles
Sworakowski, Juliusz
CHEMICAL PHYSICS, 2015, 456 : 106 - 110

← 1 2 3 4 5 →