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STRUCTURAL AND ELECTRONIC CHARACTERIZATION OF DISCHARGE-PRODUCED BORON-NITRIDE
被引:50
作者
:
MIYAMOTO, H
论文数:
0
引用数:
0
h-index:
0
MIYAMOTO, H
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
OSAKA, Y
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1983年
/ 22卷
/ 04期
关键词
:
D O I
:
10.1143/JJAP.22.L216
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L216 / L218
页数:3
相关论文
共 5 条
[1]
NORMAL MODES IN HEXAGONAL BORON NITRIDE
GEICK, R
论文数:
0
引用数:
0
h-index:
0
GEICK, R
PERRY, CH
论文数:
0
引用数:
0
h-index:
0
PERRY, CH
RUPPRECH.G
论文数:
0
引用数:
0
h-index:
0
RUPPRECH.G
[J].
PHYSICAL REVIEW,
1966,
146
(02):
: 543
-
&
[2]
LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS
HAMASAKI, T
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, T
KURATA, H
论文数:
0
引用数:
0
h-index:
0
KURATA, H
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
OSAKA, Y
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(12)
: 1084
-
1086
[3]
STRUCTURE AND PROPERTIES OF BORON-NITRIDE FILMS GROWN BY HIGH-TEMPERATURE REACTIVE PLASMA DEPOSITION
HYDER, SB
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
HYDER, SB
YEP, TO
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
YEP, TO
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(11)
: 1721
-
1724
[4]
EFFECT OF GROWTH-PARAMETERS ON THE CVD OF BORON-NITRIDE AND PHOSPHORUS-DOPED BORON-NITRIDE
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
MURARKA, SP
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
CHANG, CC
WANG, DNK
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
WANG, DNK
SMITH, TE
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SMITH, TE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(11)
: 1951
-
1957
[5]
PREPARATION AND PROPERTIES OF THIN FILM BORON NITRIDE
RAND, MJ
论文数:
0
引用数:
0
h-index:
0
RAND, MJ
ROBERTS, JF
论文数:
0
引用数:
0
h-index:
0
ROBERTS, JF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(04)
: 423
-
&
←
1
→
共 5 条
[1]
NORMAL MODES IN HEXAGONAL BORON NITRIDE
GEICK, R
论文数:
0
引用数:
0
h-index:
0
GEICK, R
PERRY, CH
论文数:
0
引用数:
0
h-index:
0
PERRY, CH
RUPPRECH.G
论文数:
0
引用数:
0
h-index:
0
RUPPRECH.G
[J].
PHYSICAL REVIEW,
1966,
146
(02):
: 543
-
&
[2]
LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS
HAMASAKI, T
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, T
KURATA, H
论文数:
0
引用数:
0
h-index:
0
KURATA, H
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
OSAKA, Y
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(12)
: 1084
-
1086
[3]
STRUCTURE AND PROPERTIES OF BORON-NITRIDE FILMS GROWN BY HIGH-TEMPERATURE REACTIVE PLASMA DEPOSITION
HYDER, SB
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
HYDER, SB
YEP, TO
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
YEP, TO
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(11)
: 1721
-
1724
[4]
EFFECT OF GROWTH-PARAMETERS ON THE CVD OF BORON-NITRIDE AND PHOSPHORUS-DOPED BORON-NITRIDE
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
MURARKA, SP
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
CHANG, CC
WANG, DNK
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
WANG, DNK
SMITH, TE
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SMITH, TE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(11)
: 1951
-
1957
[5]
PREPARATION AND PROPERTIES OF THIN FILM BORON NITRIDE
RAND, MJ
论文数:
0
引用数:
0
h-index:
0
RAND, MJ
ROBERTS, JF
论文数:
0
引用数:
0
h-index:
0
ROBERTS, JF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(04)
: 423
-
&
←
1
→