PREPARATION OF CADMIUM TELLURIDE SINGLE-CRYSTALS FOR NUCLEAR DETECTORS

被引：24

作者：

HOSCHL, P ^{[1
]}

POLIVKA, P ^{[1
]}

PROSSER, V ^{[1
]}

SAKALAS, A ^{[1
]}

机构：

[1] CHARLES UNIV, INST PHYS, PRAGUE, CZECHOSLOVAKIA

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1975年 / B 25卷 / 05期

关键词：

D O I：

10.1007/BF01589432

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：585 / 596

页数：12

共 31 条

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NAVA, F ;

OTTAVIAN.G .

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[3] NUCLEAR DETECTORS FROM CADMIUM TELLURIDE GROWN FROM A TELLURIUM SOLVENT [J].

BELL, RO ;

HEMMAT, N ;

WALD, F .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (03) :241-&

[4] RECENT ADVANCES IN PREPARATION OF CDTE FOR NUCLEAR DETECTORS [J].

BELL, RO ;

WALD, FV .

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[5]

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[6]

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[7]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[8] ELECTRICAL BEHAVIOR OF IN IN CDTE CRYSTALS [J].

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[9]

HOSCHL P, 1971, CESK CASOPIS FYZ, V21, P315

[10] EFFECT OF DOUBLY IONIZABLE VANCANCY ACCEPTORS ON CONDUCTIVITY OF DONOR DOPED SEMICONDUCTING COMPOUNDS WITH SPECIAL REFERENCE TO CDTE AND ZNTE [J].

KROGER, FA .

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