ON THE ASTM ELECTROMIGRATION TEST STRUCTURE APPLIED TO AL-1-PERCENT-SI/TIN/TI BAMBOO METAL LINES

被引:0
作者
DEMUNARI, I
VANZI, M
SCORZONI, A
FANTINI, F
机构
[1] UNIV CAGLIARI,FAC INGN,IST ELETTR,I-09123 CAGLIARI,ITALY
[2] IST LAMEL,CNR,I-40126 BOLOGNA,ITALY
[3] UNIV PARMA,DIPARTIMENTO INGN INFORMAZ,I-43100 PARMA,ITALY
关键词
ELECTROMIGRATION; THIN METAL FILM; TEST STRUCTURE;
D O I
10.1002/qre.4680110106
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The applicability of NIST-ASTM electromigration test patterns when used to test 'bamboo' metal lines is discussed. Wafer level tests on passivated and non-passivated samples employing the Al-1%/Si/TiN/Ti metallization scheme were performed. Straight metal lines 1000 mum long and 0.9 mum or 1.4 mum wide were tested at two different current densities, j = 3 MA/cm2 and j = 4.5 MA/cm2, at constant stress temperature (T = 230-degrees-C). The failures mainly occurred in the end-segment areas and hindered the evaluation of the electromigration resistance of the 'bamboo' test lines. In order to avoid this problems, completely different test patterns based on different approaches must be designed.
引用
收藏
页码:33 / 39
页数:7
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