SCHOTTKY-BARRIER HEIGHT OF METAL CONTACTS TO P-TYPE ALPHA 6H-SIC

被引：80

作者：

WALDROP, JR

机构：

[1] Rockwell International Science Center, Thousand Oaks

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 09期

关键词：

D O I：

10.1063/1.355948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A survey of metal (Pd, Ni, Au, Ag, Mg, Ti, and Al) Schottky barrier contact formation to p-type Si-face (0001) and C-face (0001BAR) 6H-SiC by using x-ray photoemission spectroscopy is reported. The Schottky barrier height phi(B) ranges from 1.17 to 2.56 eV and is influenced by the contact metal work function and the 6H-SiC crystal face. A comparison with prior phi(B) values for n-type material indicates that for SiMilarly prepared metal/6H-SiC interfaces (including those which have been annealed) phi(Bp) and phi(Bn) sum to the 6H-SiC band gap.

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页码：4548 / 4550

页数：3

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