X-RAY-DIFFRACTION STUDIES OF ANNEALED CZOCHRALSKI-GROWN SILICON .2. TRIPLE-CRYSTAL DIFFRACTOMETRY

被引：1
|
作者：
ZAUMSEIL, P
JOKSCH, S
ZULEHNER, W
机构：
[1] INST HALBLEITERPHYS,O-1200 FRANKFURT,GERMANY
[2] DESY,HAMBURGER SYNCHROTRONSTRAHLUNGSLABOR,W-2000 HAMBURG 52,GERMANY
[3] WACKER CHEMITRON GMBH,O-8263 BURGHAUSEN,GERMANY
来源：
JOURNAL OF APPLIED CRYSTALLOGRAPHY | 1993年 / 26卷
关键词：
D O I：
10.1107/S002188989201001X
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
This paper reports a series of X-ray triple-crystal diffractometry (TCD) measurements performed on annealed Czochralski-grown silicon (ACS) single crystals to investigate in more detail the reasons for the observed broadening of double-crystal diffractometer rocking curves described in the previous paper [Joksch, Zaumseil & Zulehner (1993). J. Appl. Cryst. 26, 185-191]. It is shown that diffuse scattering by structural defects created during the high-temperature heat treatment is responsible for the changes in the reflection properties. With TCD, the dominant defects are identified as stacking faults on (111) planes.
引用
收藏
页码：192 / 197
页数：6
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